نمایش نتایج جستجو برای
نویسنده: S. M. Razavi
موارد یافت شده: 4
1 - A novel AlGaN/GaN HEMT with a p-layer in the barrier (چکیده)2 - A novel 4H–SiC MESFET with recessed gate and channel (چکیده)
3 - Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics (چکیده)
4 - Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side (چکیده)